Insulated Gate Bipolar Transistors (IGBTs) have become pivotal components in modern power electronic systems, blending the high input impedance and fast switching capabilities of MOSFETs with the high ...

Key opportunities include the rise of EV production, growth in AI-driven semiconductor control, high-voltage modules for ...

Bipolar transistors, essential components in a myriad of electronic devices, are highly susceptible to the adverse impacts of radiation. Ionising radiation introduces defects within the semiconductor ...

New technical paper titled “Organic bipolar transistors” from researchers at Technische Universität Dresden, NanoP, Technische Hochschule Mittelhessen, University of Applied Science, and ALBA ...

The DXTN/P 78Q and 80Q series feature ultra-low VCE(sat) NPN and PNP transistors designed for demanding automotive power switching and control applications. These devices promise enhanced conduction ...

Diodes has expanded its series of automotive-compliant bipolar transistors with 12 NPN and PNP devices designed to achieve ultra-low V CE(sat). With a saturation voltage of just 17 mV at 1 A and ...

Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...

PLANO, Texas--(BUSINESS WIRE)-- Diodes Incorporated (DIOD) today announces an expansion of its automotive-compliant* bipolar transistor portfolio with the introduction of the DXTN/P 78Q & 80Q series.

Infineon’s RF Transistors provide the designer the best possible performance, superior flexibility and price/performance ratio. These are widely used for new emerging wireless applications, where the ...

For switching high-powered loads from a microcontroller, or for switching AC loads in general, most of us will reach into the ...