This paper presents serial cardiac-catheterization data showing spontaneous functional closure of large symptomatic defects in 3 infants. One had an associated moderate-sized patent ductus arteriosus ...

During 7nm gate poly removal process, polysilicon is removed exposing both NFET and PFET fins in preparation for high-k gate oxide. If the polysilicon etch is too aggressive or the source and drain ...

As device sizes continue to increase on devices at 2x nm design rule and beyond and high wafer stress is worsening due to multi-film stacking in the vertical memory process, we observe an increasing ...