(Nanowerk Spotlight) Doping, which can provide charge carriers to semiconductors, is an essential technology for semiconductors and devices, and it can be classified as n- and p-doping depending on ...

Professor Jiwoong Yang and his research team at the Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science & Technology (DGIST; President Kunwoo Lee) successfully developed ...

(Nanowerk News) Professor Jiwoong Yang and his research team at the Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science & Technology (DGIST; President Kunwoo Lee) ...

Researchers at the National University of Singapore (NUS) have observed a doping-tunable charge density wave (CDW) in a single-layer semiconductor, Chromium(III) selenide (Cr 2 Se 3), extending the ...

A study revealed that a simple thermal reaction of gallium nitride with metallic magnesium results in the formation of a distinctive superlattice structure. This represents the first time researchers ...

RALEIGH – Researchers from North Carolina State University used computational analysis to predict how optical properties of semiconductor material zinc selenide (ZnSe) change when doped with halogen ...

A recent article in Nature Communications introduced a method for precise p- and n-type substitutional doping of two-dimensional (2D) semiconductors. This method was applied for the one-step growth of ...

A research team from the Department of Energy Science and Engineering at Daegu Gyeongbuk Institute of Science & Technology, led by Professor Jiwoong Yang, has developed a new technique to regulate ...

The smaller electronic components become, the more complex their manufacture becomes. This has been a major problem for the chip industry for years. At TU Wien, researchers have now succeeded for the ...

A p-n junction is an interface or boundary between p-type and n-type semiconductor materials within a single semiconductor crystal. The positive (p) side contains excess holes, while the negative (n) ...