Helios will be leveraging Galaxy's Hyperdrive platform to provide epitaxy tool owners with unprecedented data insights and tool optimization capabilities. Together, we are empowering semiconductor ...

The direct band gap of AlN-based materials makes them suitable for fabricating DUV optoelectronic devices, which have a wide range of application prospects in the fields of curing, water and air ...

In a study published in Journal of the American Chemical Society, a team led by Prof. Song Li from the University of Science and Technology of China (USTC) of the Chinese Academy of Sciences ...

Remote epitaxy has been gaining attention in the field of semiconductor manufacturing for growing thin films that copy the crystal structure of the template, which can later be exfoliated to form ...

Researchers grow single-crystal GaN films on amorphous glass using a chemically converted molybdenum nitride buffer, removing the need for crystalline substrates in epitaxy (Nanowerk Spotlight) The ...

Molecular beam epitaxy (MBE) is a precision epitaxial growth technique that permits atomic‐scale tailoring of semiconductor structures. By directing beams of elemental or compound sources onto heated ...

Gallium nitride (GaN) has emerged as a key semiconductor in the evolution of power electronics thanks to its wide bandgap, high critical electric field and superior carrier mobility. Recent advances ...

Researchers from Huazhong University of Science and Technology and Hebei University have optimized the nucleation process by regulating the interactions between the epitaxial layer and the substrate.

Over on ScienceDaily we learn that an international team of scientists have turned a common semiconductor germanium into a superconductor. Researchers have been able to make the semiconductor ...

Remote epitaxy, a promising technology for thin film growth and exfoliation, suffers from substrate damage under harsh conditions. In this regard, researchers recently investigated the effect of ...