Save energy and make power systems work without changing boards. See how 1200 V SiC MOSFET modules handle high-speed power.
MILPITAS, Calif.--(BUSINESS WIRE)--On September 19, 2016, NuVolta Technologies Inc. announces that it has developed industry’s first 20W receiver IC based on its high efficiency Controlled Resonance ...
The ISL99140 is a DrMOS power module with 40 A average current output capacity intended for high frequency power conversion. The device is integrated with a diode emulation output option and thermal ...
Compared to traditional silicon, power MOSFETs based on silicon carbide (SiC) can handle higher voltages with lower on-resistance (R DS(on)) and superior thermal conductivity, opening the door to ...
No two technologies have generated more buzz in power semiconductors in recent years than GaN (Gallium Nitride) and SiC (Silicon Carbide). Both these wide band-gap (WBG) semiconductors offer several ...
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