LED applications will become the driving force of the bulk GaN market, surpassing established laser diode (LD) and emerging power electronics segments. However, major changes could occur if 4 bulk GaN ...
Researchers at US-based Technology and Devices International (TDI) have created a gallium nitride (GaN) bulk substrate, which they say will improve the performance and lifetimes of GaN-based device ...
NEW YORK & TOKYO & DÜSSELDORF--(BUSINESS WIRE)--Crystal IS, an Asahi Kasei company, today announced the successful serial production of 100 mm diameter single-crystal aluminum nitride (AlN) substrates ...
Compare 3 process flows in terms of robustness to process variation to see which one has the lowest likelihood of processing failures. Sub-5 nm logic nodes will require an extremely high level of ...
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