EDN

How to GaN: Electrical Characteristics of Enhancement Mode GaN Transistors

For a power system designer who has worked with a power MOSFET, upgrading to an enhancement mode GaN transistor is straightforward. The basic operating characteristics are quite similar and yet there ...
Electronic Design

Paralleled GaN Transistors Boost Converter Power Up to 100kW

Characteristics of enhancement-mode (e-mode) GaN, such as positive temperature coefficient of RDS(ON) and a temperature-independent threshold voltage, make them excellent candidates for paralleling.
EDN

How these power transistors will allow electronic devices to function for years without a battery

A new type of transistor could bring about a bevy of innovative electronic applications, ranging from wearables to implants to IoT devices, due to the tiny amount of power it uses. Developed by ...
Semiconductor Engineering

Searching For The Next Power Transistor

For decades, the industry has relied on various power semiconductors to control and convert electrical power in an efficient manner. Power semis are ubiquitous, as they are found in adapters, ...
Electronic Design

GaN Power Transistors: Master Strokes on a Power-Supply Canvas

Sponsored by Texas Instruments: Adding gallium-nitride devices such as FETs to power-supply topologies such as the active-clamp flyback can lead to a variety of performance improvements. It’s not news ...
mccormick.northwestern.edu

ELEC_ENG 401: Fundamentals of Electronic Devices

Transport phenomena in semiconductors, theory of the p-n junction, bipolar and unipolar devices, general analysis of the metal-semiconductor and MIS structures, CCD, MOSFET and bipolar transistors.