High performance-to-price-ratio GaN-based power and RF devices should see implementations in IT, communications, industrial, and consumer electronics, as well as make inroads into more general ...
This article is part of EDN and EE Times’ Hot Technologies: Looking ahead to 2017 feature, where our editors examine some of the hot trends and technologies in 2016 that promise to shape technology ...
When two competing technologies approach cost parity, the better performing technology will always win out in the market. This is an accepted truism throughout the embedded electronics and ...
DURHAM, N.C.--(BUSINESS WIRE)--Cree, Inc. (Nasdaq: CREE) announces the qualification and production release of two new GaN processes: G40V4, a 0.25µm process with operating drain voltage up to 40V, ...
LONDON—Lord Drayson (i.e. Paul Drayson), the UK’s former Minister of Science, CEO of Drayson Technologies, and head of the Drayson Racing team, this morning unveiled a rather wondrous new technology: ...
Challenges like higher selectivity and precise etching are critical for angstrom-scale IC production. Advanced RF pulsing and plasma control enhance precision in sub-nanometer processes. New impedance ...