The 300mm silicon carbide wafer targets higher production capacity for power electronics and advanced system integration.
(RTTNews) - German semiconductor maker Infineon Technologies AG (IFNNY) announced Wednesday the development of the world's first 300 mm power gallium nitride or GaN wafer technology. The ...
OKI (TOKYO: 6703) has successfully developed Tiling crystal film bonding (CFB; Note 1) technology using its proprietary CFB technology. This technology makes possible the heterogeneous integration of ...
PHOENIX, Oct. 07, 2025 (GLOBE NEWSWIRE) -- SEMICON WEST -- ClassOne Technology, a leading global provider of advanced electroplating and wet processing tools for microelectronics manufacturing, today ...
Synthetic diamond, thanks to its superlative properties, including high breakdown field and high thermal conductivity, is the ultimate answer, promising to become the go-to material platform for the ...
The 2nm wafer technology ramp-up can potentially accelerate revenues and gross margins even more than what was seen in the 3nm ramp-up. TSMC is capacity-constrained. Capex investments to alleviate ...
Infineon Technologies (OTCQX:IFNNY) on Wednesday said it is looking to grab a share of the growing gallium nitride (GaN) market with the development of a new technology, that could help in bringing ...
PI (Physik Instrumente) announced a new technology platform for electro-optical wafer-level testing designed to validate ...